Research Interest

Thin film semiconductor materials and devices, flat panel displays, solar cells, novel silicon-on-insulator materials and devices.

Degrees

• Jan. 1982 BS, Shanghai University of Technology, Applied physics
• Aug. 1988 Ph.D., Princeton University, Electrical Materials and Devices

Recent Publications

“Engineering of interfacial layer between HfAl2O5 dielectric film and Si with a Ti-capping layer”, Xinhong Cheng, Zhaorui Song, Yumei Xing, Yuehui Yu and Dashen Shen, Thin Solid Films, Vol. 517, p. 462-464, 2008

“Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics”, Zhaorui Song, Xinhong Cheng, Enxia Zhang, Yumei Xing, Yuehui Yu, Zhengxuan Zhang, Xi Wang and Dashen Shen, Thin Solid Films, Vol. 517, p. 465-467, 2008

“The effect of blocking layer of Al2O3 on thermal stability and electrical properties of HfO2 dielectric films deposited on SiGe layer”, Xinhong Cheng, Dawei He, Zhaorui Song, Yuehui Yu and DaShen Shen, Microelectronic Engineering, Vol. 85, p. 1888–1891, 2008.

“Interfacial structures and electrical properties of HfAl2O5 gate dielectric film annealed with a Ti capping layer”, X.H Cheng, L. Wan, Z.R. Song, Y.H. Yu and DaShen Shen, Appl. Phys Lett, vol. 90, 152910, 2007. 

“Influence of nitrogen element on total-dose radiation response of high-k Hf-based dielectric films,” Z.R. Song, X.H. Cheng, E.X. Zhang, Y.M. Xing, Q.W. Shen, Y.H. Yu, Z.X. Zhang, X. Wang and D.S. Shen, Nucl. Inst. Meth B.  Vol. 257, p. 501-504, 2007.

"Characteristics of HfxSiyO films grown on Si0.8Ge0.2 layer by electron beam evaporation", X.H. Cheng, Z.R. Song, Y.H. Yu, W.W. Yang, D.S. Shen, Appl. Phys. Lett, Vol 88, 122906, 2006.

"Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications", X.H. Cheng, Z.R. Song, J. Jiang, Y.H. Yu, W.W. Yang, D.S. Shen, Applied Surface Science, Vol. 252, Issue 23, p. 8073-8076, 2006.

"A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs," W.W. Yang, X.H. Cheng, Y.H. Yu, Z.R. Song, D.S. Shen, Solid-State Electronics, Vol. 49, p. 43-48, 2005.

"Electron field emission from SiC/Si heterostructures by high temperature carbon implantation into silicon," Y.M. Xing, J.H. Zhang, W.W. Yang, Y.H. Yu, Z.R. Song, Z.X. Lin and D.S. Shen, Appl. Phys. Lett, Vol. 84, p.5461, 2004.

"Simulation and characterization on properties of AlN films for SOI application," Z.R. Song, Y.H. Yu, S.C. Zou, Z.H. Zheng, D.S. Shen, E.Z. Lou, Z. Xie, B. Sundaravel, S.P. Wong, I.H. Wilson, Thin Solid Films, Vol. 459, p.41-47, 2004.

"Electrical properties and microstructure of buried oxide (BOX) of SIMOX studied by conducting atomic force microscopy (c-AFM)," Z.R. Song, K.W. Chen, Y.H. Yu, E.Z. Lou, D.S. Shen, Thin Solid Films, Vol. 459, p.58-62, 2004

"Spectroscopic ellipsomitry characterization of the interfacial roughness in SIMOX wafers," W.J. Li, Z.R. Song, K. Tao, X.H. Cheng, W.W. Yang, Y.H. Yu, X. Wang, S.C. Zou, D.S. Shen, Thin Solid Films, Vol. 459, p.63-66, 2004.

"sp3/sp2 Ratio in Amorphous-Carbon Thin Film by Spectroscopic Ellipsometry," W. J. Li, Z. R. Song, Y. H. Yu, X. Wang, S. C. Zou and D. S. Shen, J. Appl. Phys., Vol. 94, p.284, 2003.

"Characterization of Nano-Sized Si Islands in Buried Oxide (BOX) Layer of SIMOX by Using Conducting AFM", K.W. Chen, Y. H. Yu, E. Z. Luo, Z. Xie, J. B. Xu, I. H. Wilson, W. Y. Bishop and D. S. Shen, Chemical Physics Lett., Vol 376/5-6 pp 748-752, 2003.

"Dielectric properties of AIN Thin Films Formed by Ion Beam Enhanced Deposition", Z. R. Song, Y. H. Yu, D. S. Shen, S. C. Zou, Z. H. Zheng, E. Z. Luo, Z. Xie, Materials Letters, To be published, 2003.

"Tetrahedral amorphous carbon thin film for silicon-on-insulator application", Z. R. Song, Y. H. Yu, C. L. Li, S. C. Zou, F. M. Zhang and X. Wang; D. S. Shen; E. Z. Luo, B. Sundaravel, S. P. Wong and I. H. Wilson, Appl. Phys. Lett., Vol 80, p. 743, 2002.

"Amorphous Silicon Photodetector for Optical Interconnections", Rhonda Gaede, Fenglei Li, David Hyde and Dashen Shen, J. Non-crystalline Solids, Vol. 266-269, p. 1208, 2000.

"Numerical Calculation of Gate Line Delay in Very Large Active Matrix Liquid Crystal Display with Via Holes", Qing Zhang and D.S. Shen, IEEE Trans. Circuits and Systems, Vol 46, p. 435, 1999.

"Modeling of Gate Line Delay in Very Large Active Matrix Liquid Crystal Displays", Q. Zhang, D.S. Shen, H. Gleskova and S. Wagner, IEEE Trans. Electron Devices, Vol. 45, p. 343, 1998.

"Photoresist-free Fbrication Process for a-Si:H TFTs", H. Gleskova, S. Wagner and D.S. Shen, J. Non-Crystalline Solids, Vol. 227-230, p. 1217, 1998, also Conf. ICAMS'97.

"Via Hole Technology for Thin Film Transistor Circuits", H. Gleskova, S. Wagner, Q. Zhang and D.S. Shen, IEEE Electron Device Lett., Vol. 18, p. 523, 1997.

"Electrophotographically Patterned Thin Film Transistors", H. Gleskova, R. Konenkamp, S. Wagner and D.S. Shen, IEEE Electron Device Lett., Vol. 17, p. 264, 1996.

"Transient Photocurrent in Hydrogenated Amorphous Silicon and Implications for Photodetector Devices", D.S. Shen and S. Wagner, J. Appl. Phys., Vol. 79, p. 794, 1996.

"In-plane Photoconductivity in Amorphous Silicon Doping Multilayers", J.P. Conde, M. Silva, V. Chu, H. Gleskova, K. Vasanth, S. Wagner, D.S. Shen, P. Popovic, S. Grebner, R. Schwarz, Phil. Mag. B, Vol. 74, p. 331, 1996.

"Electrophotographic Patterning of Thin-Film Silicon on Glass Foil", H. Gleskova, S. Wagner and D.S. Shen, IEEE Electron Device Lett., Vol. 16, p. 418, 1995.

"Numerical Modeling of the Dependence of the Steady State Photoconductivity in Hydrogenated Amorphous Silicon on the Rate of Carrier Generation", D.S. Shen and S. Wagner, J. Appl. Phys., Vol. 78, p. 278, 1995.

"Amorphous Silicon Thin Film Photodetectors for Optical Interconnection", D.S. Shen, S.T. Kowel and C. A. Eldering, Optical Eng., Vol. 34(3), p. 881, 1995.